FREMONT, Calif., Jan. 14, 2025 /PRNewswire/ -- Lam Research Corporation (Nasdaq: LRCX) today announced that its innovative dry photoresist (dry resist) technology has been qualified for direct-print 28nm pitch back end of line (BEOL) logic at 2nm and below by imec, a leading research and innovation hub in nanoelectronics and digital technologies. An advanced patterning technique introduced by Lam, dry resist enhances the resolution, productivity and yield of extreme ultraviolet (EUV) lithography, a pivotal technology used in the production of next-generation semiconductor devices.
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