Vishay Intertechnology, Inc.

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CUSIP

928298108
SEDOL

2930149
CIK

0000103730

www.vishay.com
LEI:
FIGI: BBG000BWKB81
VSH

Vishay Intertechnology, Inc.
GICS: - · Sector: Technology · Sub-Sector: Semiconductors
AI
PROFILER
NAME
Vishay Intertechnology, Inc.
ISIN
US9282981086
TICKER
VSH
MIC
XNYS
REUTERS
VSH.N
BLOOMBERG
VSH US
EN 728x90
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GlobeNewswire is an important news source that provides investors with company-related information. In particular, it deals with events that may be relevant to the listing of companies or tradable financial instruments. You can access the complete overview of all reports via this link.

Wed, 08.01.2025

MALVERN, Pa., Jan. 08, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc., (NYSE: VSH), will release its results for the fiscal fourth quarter ended December 31, 2024, before the New York Stock Exchange opens on Wednesday, February 5, 2025.

Mon, 06.01.2025

Reducing Costs, New Devices Offer Smaller Package Sizes, Wider Value Ranges, and Improved Performance
Reducing Costs, New Devices Offer Smaller Package Sizes, Wider Value Ranges, and Improved Performance
Wed, 18.12.2024

Devices Feature Low TCR to ± 15 ppm/K, Tight Tolerances to ± 0.1 %, and High Resistance of Up to 10 MΩ in 0102, 0204, and 0207 Case Sizes
Devices Feature Low TCR to ± 15 ppm/K, Tight Tolerances to ± 0.1 %, and High Resistance of Up to 10 MΩ in 0102, 0204, and 0207 Case Sizes
Wed, 11.12.2024

Space-Saving, Industrial-Grade Device Combines Fast Turn-on Time of 0.3 ms Typical With Low Leakage Current of 2 nA
Space-Saving, Industrial-Grade Device Combines Fast Turn-on Time of 0.3 ms Typical With Low Leakage Current of 2 nA
Fri, 06.12.2024

Featuring a VCSEL and Smart Dual I²C Slave Address, the VCNL36828P Offers Idle Current Down to 5 μA in a Compact 2.0 mm x 1.0 mm x 0.5 mm SMD Package
Featuring a VCSEL and Smart Dual I²C Slave Address, the VCNL36828P Offers Idle Current Down to 5 μA in a Compact 2.0 mm x 1.0 mm x 0.5 mm SMD Package
Wed, 04.12.2024

Space-Saving Device Features BWL Design and High ID to 795 A to Increase Power Density, While Low RthJC of 0.21 °C/W Improves Thermal Performance

Wed, 27.11.2024

Cost- and Space-Saving Devices Shortlisted in “Passive and Electromechanical Product of the Year” Category
Cost- and Space-Saving Devices Shortlisted in “Passive and Electromechanical Product of the Year” Category
Tue, 26.11.2024

Rated to 100 000 Pulses, AEC-Q200 Qualified Device Provides High Power Dissipation of 35 W
Rated to 100 000 Pulses, AEC-Q200 Qualified Device Provides High Power Dissipation of 35 W
Wed, 20.11.2024

Offered in PowerPAK® SO-8S Package, TrenchFET® Device’s Low RthJC of 0.45 °C/W Enables High ID to 144 A to Increase Power Density
Offered in PowerPAK® SO-8S Package, TrenchFET® Device’s Low RthJC of 0.45 °C/W Enables High ID to 144 A to Increase Power Density
Wed, 13.11.2024

New TS7 Series Delivers High Power Density in a Compact 6.7 mm x 7 mm Footprint, Offering 0.5 W Power Rating and IP67 Sealing
New TS7 Series Delivers High Power Density in a Compact 6.7 mm x 7 mm Footprint, Offering 0.5 W Power Rating and IP67 Sealing
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